European Nomenclature
Japanese Nomenclature
The Part number is an essential part of the device identification process.
Depending on where the parts are made the part numbers will mean something
different. For example, The European nomencalature is different fron
the Japanese nomenclature which is different from the North American
nomenclature. Parts of each of these nomenclatures means something different.
They represent information that is important to the way the device is
used. For example, what matierial the device is made out of, applications
it can be used for, and a series of number that distinguish that part
from all others so one can find device specifications and parts that
may be compatible with the part that is being looked up.
European Semiconductor Numbering
System
BFR90
|| | Third, Fourth, Fith Character(Serial Code)
|| Y## Industrial service (No letter Z)
|| ## is a W## Registration number from 10_99
|| 100- Device for consumer or entertainment
|| 999 use.
||
||
First letter---||----Second Leter(Type)]
(Material)
A Germanium A Low Power diode,
voltage-variable capacitor
B Silicon B Varicap
C Compound Materials C Small-signal audio transistor
such as cadmium
sulfide or gallium
arsenide used in
semiconductor devices.
(energy gap band of
1.3 or more eV.)
D Materials with an D Audio power transistor
energy gap of less
than 0.6 eV such as
Indium antimonide.
R Radiation detectors, E tunnel diode
photo-conductive cells,
Hall-effect generators
and so on
F Small-signal RF transistor
G Miscellaneous
H Field Probe
K Hall Generator
L RF-Power transistor
M Hall modulators and multipliers
P Photo diode, photo-resistor
,photo-conductive cell(LDR),
Radiation device.
R Low-power controlled rectifier
S Low-power switching transistor
T Breakdown devices,high-power
controlled rectifier,Schottky
diode, Thyristor,pnpn diodes.
U High-powered switching transistor
X Multiplier diode
Y High-power rectifier(diode)
Z Zener diode
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Japanese Nomenclature
i ii iii iv v
2 S C 82D A
i) Kind of device, indicating the number of effective
electrical connections minus one.
ii) For a semiconductor registered with the EIAJ this
letter is always an S.
iii) Third letter designates the polarity and application, as follows:
A PNP transistor, high-frequency
B PNP transistor, low-frequency
C NPN transistor, high-frequency
D NPN transistor, low-frequency
E P-gate thyristor
F N-gate thyristor
H N-base unijunction transistor
J P-channel FET
K N-channel FET
M Bi-directional triode thyristor
iv) These figures designate the order of application
for EIAj registration, starting with 11.
v) This letter indicates the level of improvement.
An improved device may be used in place of
a previous-generation device , but not necessarily
the other way around.
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